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Team Epsilon expertise is in the development of software defined voice-and-data radio systems and components, low-profile phased array antennas, and semiconductor packaging.
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Broad Capabilities:
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Radio and Radar Systems and Subsystems
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RF/ Microwave component design
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RF Packaging and Module Design
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IC Design
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Specific Application Capabilities
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Radio and Radar Systems and Subsystems
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High frequency (decameter band/wave, Ka, Ku) solutions
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MIL-STD-188-141A, MIL-STD-188-141B, and MIL-STD-188-110B protocol
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STANAG 5066 ARQ/High Frequency Internet Protocol (HFIP) applications
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Phased array group antennas for broadcast, military, space, weather, and optics applications
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Advanced up/down converters, phase shifters, transmit/receive modules, and frequency mixers
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Dielectric resonator oscillators (DRO)
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Low-noise amplifiers (LNA)
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Phase-locked loops (PLL)
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Active, passive, and semi-passive RFID (radio frequency identification) tags, transponders, and related systems
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Orbital debris radar/fusing radar for space applications
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RF/Microwave Component Design
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Solid state power amplifiers (multi-octave bandwidth designs covering a variety of bands from 500MHz through 32GHz; VGAs)
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Up/downconverters (image reject mixers; single, double, and triple conversion)
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Synthesizerss (low-phase noise; fixed and tunable; DDS; Frac-N; phase-locked multipliers; VCOs)
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Filters (distributed/lumped; low distortion)
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Phase shifters (narrowband wide-phase tuning; broadband MMICs)
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Antennas (phased array; conical; patched; circular polarized)
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RF Packaging and Module Design
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3D EM simulations
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Thermal simulations
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Physical layout
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High-temperature cofired ceramic (HTCC)
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Low-temperature cofired ceramic (LTCC)
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Laminate & liquid crystal polymer (LCP)
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IC Design
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Radar, mobile phones, satellite communications, and microwave point-to-point applications using gallium arsenide (GaAs) and solar applications using GaAs heterostructures
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Silicon-germanium-on-insulator (SiGi) for ultra-high-speed transistors inside microchips (BiCOMOS)
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Ultra-large-bandgap pseudomorphic HEMT (PHEMT) transistors
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Silicon geranium (SiGe)-based very-high-frequency heterojunction bipolar transistors (HBT) for ultrafast circuit applications
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Gallium nitride (GaN) nanotubes, enabling optoelectronics, biochemical sensing, and nanoscale electronics applications
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Spintronics using gallium nitrade (GaN) technologies
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Next-generation light emitting diodes (LEDs), using InGaN or AIGaN
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High-forward gain, low-reverse gain heterojunction bipolar transistors using silicon-germanium (SiGe)
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Key Technical Staff
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Over 225 combined years of experience. Members of Team Epsilons senior technical staff include:
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Chief Scientist, PhD in Physics. Over 25 years of industry experience in microelectronic packaging and assembly, thick and thin film processes, designing tunable filters, switches, phase shifters and antennas, W-band video camera, Java processors/software for handsets, lasers and optics, in both commercial and military areas.
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Chief Technology Officer, MSSEE. Over 30 years of industry experience with key areas of expertise in wide-bandwidth microwave communications and radar systems, microprocessor-based systems, digital signal processing, and software development.
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Chief Engineering Officer, MSSEE. Over 30 years RF/microwave and test systems domain knowledge and experience, including as an inventor and published author.
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Senior Analog/RF Engineer. MSEE. Over 23 years experience with Expert in PLL, DLL, and VCO circuits. Designed using Bipolar (SiGe), BICMOS, SOI, CMOS and GaAs high speed processes. Developed various clock and data recovery circuits for 40 Gb/s, 10 Gb/s and 2.5Gb/s SONET data communications; and frequency synthesizers beyond 20 GHz.
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